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cha4107 - qdg ref. : dscha4107 - qdg4188 - 07 jul 14 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 c - band medium power amplifier gaas monolithic microwave ic in smd leadless package description the cha4107 - qdg is a monolithic two - stage gaas medium power amplifier designed for c - b and applications. the mpa provides typically 2 5.5 dbm output power associated to 3 0 % power added efficiency at 1 db gain compression. i t is supplied in rohs compliant smd package. main features ? ? ? ? ? ? ? main characteristics tamb = 2 5 c, vd = 8v, id (quiescent) = 1 2 0ma, drain pulse width= 50 s, duty cycle = 10 % symbol parameter min typ max unit fop operating frequency range 4.5 6.5 ghz pae_p - 1 db power added efficiency @ 1 dbcomp & 2 5 c 3 0 % p - 1 db output power @ 1 dbcomp @ 2 5 c 2 5.5 dbm ums a4107 yyww ? ? 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 4 4.5 5 5.5 6 6.5 frequency (ghz) pout (dbm) & pae (%) 5 7 9 11 13 15 17 19 21 23 25 gain (db) pae_1dbc @ temp=25c pout_1dbc @ temp=25c linear gain @ temp=25c ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg
cha4107 - qdg c - band medium power amplifier ref. : dscha4107 - qdg4188 - 07 jul 14 2 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb = +25c, vd = 8v, id (quiescent) = 1 2 0ma, drain pulse width = 50s, duty cycle = 10% symbol parameter min typ max unit fop operating frequency 4.5 6.5 ghz g small signal gain 2 2 .5 db rlin input return loss 1 4 8 db rlout output return loss 10 8 db p - 1db output power @ 1dbcomp 2 5.5 dbm pae_ p - 1db power added efficiency @ 1dbcomp 30 % id_ p - 1db supply drain current @ 1dbcomp 145 ma p - 3db output power @ 3dbcomp 2 6 dbm pae_ p - 3db power added efficiency @ 3dbcomp 3 6 % id_ p - 3db supply drain current @ 3dbcomp 160 ma vd1, vd2 drain supply voltage 8 v id supply quiescent current (1) 1 2 0 ma vg gate supply voltage - 0.8 v (1) parameter can be adjusted by tuning of vg. absolute maximum ratings (1) tamb.= +25c symbol parameter values unit cmp compression level (2) 6 db vd supply voltage (3) 9.5 v id supply quiescent current 17 0 ma id_sat supply current in saturation 200 ma vg supply voltage [ - 3.0; - 0. 4] v tj maximum junction temperature 175 c tstg storage temperature range - 55 to +1 50 c top operating temperature range - 40 to +85 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) for higher compression the level limit can be increased by decreasing the voltage vd using the rate 0.5v/db of gain comp ression . (3) without rf input power.
c - band medium power amplifier cha4107 - qdg ref. : dscha4107 - qdg4188 - 07 jul 14 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 3 2 00 - fax: +33 (0) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below than the maximum value specified in the next table. so, the system pcb must be designed to comply with this requirement. a derating mus t be applied on the dissipated power if the tcase temperature can not be maintained below than the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf).
cha4107 - qdg c - band medium power amplifier ref. : dscha4107 - qdg4188 - 07 jul 14 4 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd = 8v, id (quiescent) = 1 2 0ma, drain pulse width = 50s, duty cycle = 10% linear gain versus frequency s11 versus frequency 18 19 20 21 22 23 24 25 26 27 28 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) linear gain (db) linear gain @ temp=25c -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) s11 (db) s11 @ temp=25c
c - band medium power amplifier cha4107 - qdg ref. : dscha4107 - qdg4188 - 07 jul 14 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 3 2 00 - fax: +33 (0) 1 69 86 34 34 typical on board measurements vd = 8v, id (quiescent) = 1 2 0ma, drain pulse width = 50s, duty cycle = 10% s22 versus frequency output power @ 1dbcomp versus frequency -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) s22 (db) s22 @ temp=25c 20 21 22 23 24 25 26 27 28 29 30 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) pout (dbm) pout_1dbcomp @ temp=+25c
cha4107 - qdg c - band medium power amplifier ref. : dscha4107 - qdg4188 - 07 jul 14 6 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on board measurements vd = 8v, id (quiescent) = 12 0ma, drain pulse width = 50s, duty cycle = 10% power added efficiency @ 1dbcomp versus frequency drain current @ 1dbcomp versus frequency 0 5 10 15 20 25 30 35 40 45 50 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) pae (%) pae_1dbcomp @ temp=+25c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) id (a) idrain_1dbcomp @ temp=+25c
c - band medium power amplifier cha4107 - qdg ref. : dscha4107 - qdg4188 - 07 jul 14 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 3 2 00 - fax: +33 (0) 1 69 86 34 34 typical on board measurements vd = 8v, id (quiescent) = 12 0ma, drain pulse width = 50s, duty cycle = 10% output power @ 3 dbcomp versus frequency power added efficiency @ 3 dbcomp versus frequency 20 21 22 23 24 25 26 27 28 29 30 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) pout (dbm) pout_3dbcomp @ temp=+25c 0 5 10 15 20 25 30 35 40 45 50 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) pae (%) pae_3dbcomp @ temp=+25c
cha4107 - qdg c - band medium power amplifier ref. : dscha4107 - qdg4188 - 07 jul 14 8 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on board measurements vd = 8v, id (quiescent) = 120ma, drain pulse width = 50s, duty cycle = 10% drain current @ 3 dbcomp versus frequency 0.00 0.05 0.10 0.15 0.20 0.25 0.30 4.0 4.5 5.0 5.5 6.0 6.5 frequency (ghz) id (a) idrain_3dbcomp @ temp=+25c
c - band medium power amplifier cha4107 - qdg ref. : dscha4107 - qdg4188 - 07 jul 14 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 3 2 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) matt tin. lead free (green) 1 - nc 9 - nc 17 - gnd units : mm 2 - gnd 10 - nc 18 - nc from the standard : jedec mo - 220 3 - gnd 11 - nc 19 - nc (vggd) 4 - rf in 12 - nc 20 - vd2 25 - gnd 5 - gnd 13 - gnd 21 - gnd 6 - gnd 14 - gnd 22 - vd1 7 - nc 15 - rf out 23 - vg 8 - nc 16 - gnd 24 - gnd (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board. ens
cha4107 - qdg c - band medium power amplifier ref. : dscha4107 - qdg4188 - 07 jul 14 10 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board
c - band medium power amplifier cha4107 - qdg ref. : dscha4107 - qdg4188 - 07 jul 14 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 3 2 00 - fax: +33 (0) 1 69 86 34 34 dc schematic medium power amplifier: 8 v, 12 0ma g1b vd1 in out 170 5 5 4x60m 10x55m 170 10 170 vg 20 pf 25 50 5 20 pf g2b vd2 g2a 20 pf 170 25 5 20 pf 2 gnd
cha4107 - qdg c - band medium power amplifier ref. : dscha4107 - qdg4188 - 07 jul 14 12 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suit able reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environme ntal data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 4x4 package: cha4107 - qdg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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